Impact of Body Coefficient and Threshold Voltage on CNTFET with Varying Oxide Thickness
نویسندگان
چکیده
In this paper we analyze threshold voltage and body coefficient (Υ) on varying the oxide thickness in CNTFET. Simulation analysis of drain current and drain voltage characteristic is discussed and found that due to decreasing nature of quantum capacitance in CNTFET, the factor (Υ) has still impact on device and it is not negligible in deep nano regime. We also observed from simulation on nanohub, that the above mention characteristic is increasing while reducing the threshold voltage along with oxide thickness. KeywordsCNTFET, MOSFET, Quantum Capacitance, Threshold Voltage, Body Coefficient
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